| AL (AL + Cu + Si) | - Warm phosophoric (H2SO4), 5 min,
100 C
- Warm HCL, 5 min - Warm Aluminum Etch (16-1-1-2), 5 min - HPO3/CH3COOH/HNO3 (Very rapid etch time) Note: Phosphoric does not etch as
rapidly therefore it is recommended for a multi-level metal
|
| MoSi-Al-Tin | - Alternate warm HCL (5 mim.) with Piranha
etch
Note: The procedure undercuts the MoSi by etching the aluminum (HCL) and the TiN (Piranha). Piranha etch is exothermic and will exhibit heat. Check: Optically. If metal remains either oxide was present on metal or etch was weak. |
| MoSi-Al-Tin | - Undercut with BOE
- High temperature (250 C) aluminum etch (25 min) Note: Aluminum etch at high temperature is difficult to control in terms of etch rate. This deprocessing step is still being investigated. Check: Optically. If metal remains either oxide was present on metal or etch was weak. |
| Al - TiW | - Warm HCL (Al etch) followed by
warm hydrogen preoxide (TiW etch)
Note: Selectivity is excellent. Check: Optically. If metal remains either oxide was present on metal or etch was weak. |
| Platinum Silicide Barrier contacts | - Acqua
Regia
Note: Will attack metallization. |
| AU (gold) | - Acqua
Regia
Note: Will attack metallization. |
| PT(Silver) | - Acqua
Regia
Note: Will attack metallization. |
| Cu Leads | - 1 HNO3 - 1 H2O (Room temp) |
| Silver Die attach | - 1 HNO3 - 1 H2O (Room temp,: 5-15 min.) |
| Cr | - Bromine/methanol (Dissolves all metal) |
| W-Ti | - H2O2 at 50 degrees C
- Bromine/methanol (Dissolves all metal) |
